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Reclaimed Wafer & Wafer Thinning
IGBT-BGBM
再生晶圓與晶圓薄化
IGBT-晶背減薄與金屬化
Silicon / SiC / GaN
再生晶圓以物理除膜技術，減少設備投資，更能減降環保負荷與生產成本。
晶圓薄化超薄研磨 (≥50um) ⾼良率产出，創新蝕刻製程，作應力釋放及去除晶背微細損傷減少破片。晶背金屬化綠色製程，無化學蝕刻與HF洗淨，Ti/Ni/Ag鍍層簡化製程不易变⾊且具成本優勢。
IGBT-BGBM耐高溫製程 SIPOS (Semi-insulation Poly Oxide)、Stoichiometry Silicon Nitride 與抗短路製程 Trench Bottom Implant、 Low temperature Oxidation、 Isolation P-well等關鍵技術。
Wafer thinning process have been developed as specification of less than 50 micro-meter.
Reclaimed wafer developed new process with physical film removal technology. To reducing chemical consumption. To increasing process throughput.
New technology of green cleaning process to saving water and chemical consumption.
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